CMOS optoelectronicsLIU, C. W; HSU, B.-C.Proceedings - Electrochemical Society. 2004, pp 383-395, issn 0161-6374, isbn 1-56677-406-3, 13 p.Conference Paper

Advanced short-time thermal processing for Si-based CMOS devices II (San Antonio TX, 10-12 May 2004)Öztürk, M.C; Chen, L.J; Timans, P.J et al.Proceedings - Electrochemical Society. 2004, issn 0161-6374, isbn 1-56677-406-3, XII, 428 p, isbn 1-56677-406-3Conference Proceedings

Effects of impurities in hafnium dioxideXIA, B; STESMANS, A; CHEN, F et al.Proceedings - Electrochemical Society. 2004, pp 304-312, issn 0161-6374, isbn 1-56677-406-3, 9 p.Conference Paper

Fundamental issues in millisecond annealingACHARYA, N; TIMANS, P. J.Proceedings - Electrochemical Society. 2004, pp 11-18, issn 0161-6374, isbn 1-56677-406-3, 8 p.Conference Paper

Device and substrate design for sub-10 nm MOSFETsIEONG, Meikei; DORIS, Bruce; KEDZIERSKI, Jakub et al.Proceedings - Electrochemical Society. 2004, pp 371-382, issn 0161-6374, isbn 1-56677-406-3, 12 p.Conference Paper

Optimization of pre-amorphization and dopant implant conditions for advanced annealingFELCH, S. B; GRAOUI, H; MAYUR, A et al.Proceedings - Electrochemical Society. 2004, pp 31-38, issn 0161-6374, isbn 1-56677-406-3, 8 p.Conference Paper

Laser anneal technology for poly-silicon dopant activation enhancementMA, Y; AHMED, K. Z; MUTHUKRISHNAN, S et al.Proceedings - Electrochemical Society. 2004, pp 230-235, issn 0161-6374, isbn 1-56677-406-3, 6 p.Conference Paper

Fully silicided metal gates for high performance CMOs technologyMASZARA, W. P.Proceedings - Electrochemical Society. 2004, pp 341-353, issn 0161-6374, isbn 1-56677-406-3, 13 p.Conference Paper

Radiative properties of silicon considering surface imperfections and chamber effectsZHANG, Z. M; LEE, H. J.Proceedings - Electrochemical Society. 2004, pp 19-30, issn 0161-6374, isbn 1-56677-406-3, 12 p.Conference Paper

Solid phase epitaxy: Activation and deactivation of boron in ultra-shallow junctionsLERCH, W; PAUL, S; NIESS, J et al.Proceedings - Electrochemical Society. 2004, pp 90-105, issn 0161-6374, isbn 1-56677-406-3, 16 p.Conference Paper

Hafnium titanate as a high-K gate insulatorCHEN, F; LI, M; AFANASEV, V et al.Proceedings - Electrochemical Society. 2004, pp 278-285, issn 0161-6374, isbn 1-56677-406-3, 8 p.Conference Paper

Challenges in integration of metal gate high-K dielectrics gate stacksTSAI, W; RAGNARSSON, L-A; SCHRAM, T et al.Proceedings - Electrochemical Society. 2004, pp 321-327, issn 0161-6374, isbn 1-56677-406-3, 7 p.Conference Paper

Low thermal budget germanium MOS technologyCHI ON CHUI; SARASWAT, Krishna C.Proceedings - Electrochemical Society. 2004, pp 396-405, issn 0161-6374, isbn 1-56677-406-3, 10 p.Conference Paper

Nickel SALICIDE technology for sub-100nm CMOS devicesLU, J. P; MILES, D. S; MERCER, D et al.Proceedings - Electrochemical Society. 2004, pp 159-173, issn 0161-6374, isbn 1-56677-406-3, 15 p.Conference Paper

Recent progress in gate dielectric scalingHIGASHI, G. S; KRAUS, P; TEVATIA, G et al.Proceedings - Electrochemical Society. 2004, pp 271-277, issn 0161-6374, isbn 1-56677-406-3, 7 p.Conference Paper

Strained germanium MOSFETs: Devices and process technologyRITENOUR, A; LEE, M. L; LU, N et al.Proceedings - Electrochemical Society. 2004, pp 406-411, issn 0161-6374, isbn 1-56677-406-3, 6 p.Conference Paper

TiCl₄ as a precursor in the TiN deposition by ALD and PEALDELERS, Kai-Erik; WINKLER, Jerry; MARCUS, Steven et al.Proceedings - Electrochemical Society. 2004, pp 361-368, issn 0161-6374, isbn 1-56677-406-3, 8 p.Conference Paper

Characterization of silicon nitride films for the thin film transistor gate dielectricSAAD ABBASI, M; HOSSAIN, Maruf; ABU-SAFE, Husam et al.Proceedings - Electrochemical Society. 2004, pp 222-229, issn 0161-6374, isbn 1-56677-406-3, 8 p.Conference Paper

Structure and dynamics of SI interstitials at SI(001) and SI(001)/SIO₂KIRICHENKO, Taras A; YU, Decai; BANERJEE, Sanjay K et al.Proceedings - Electrochemical Society. 2004, pp 112-119, issn 0161-6374, isbn 1-56677-406-3, 8 p.Conference Paper

Defect behavior and control in advanced CMOs process technologiesCLAEYS, C; SIMOEN, E.Proceedings - Electrochemical Society. 2004, pp 50-65, issn 0161-6374, isbn 1-56677-406-3, 16 p.Conference Paper

Further optimization of plasma nitridation of ultra-thin oxides for 65nm node MOSFETsKRAUS, P. A; CHUA, T. C; NOURI, F et al.Proceedings - Electrochemical Society. 2004, pp 236-243, issn 0161-6374, isbn 1-56677-406-3, 8 p.Conference Paper

Integration of low and high temperature junction anneals for 45 NM CMOsLINDSAY, R; PAWLAK, B. J; MAEX, K et al.Proceedings - Electrochemical Society. 2004, pp 145-156, issn 0161-6374, isbn 1-56677-406-3, 12 p.Conference Paper

Reduced poly-SI gate depletion effect by pulsed excimer laser annealingHIU YUNG WONG; TAKEUCHI, Hideki; KING, Tsu-Jae et al.Proceedings - Electrochemical Society. 2004, pp 205-215, issn 0161-6374, isbn 1-56677-406-3, 11 p.Conference Paper

Silicon precursors for gate dielectric and electrode applicationsHOOVER, Cynthia A; MEIERE, Scott H; LITWIN, Michael M et al.Proceedings - Electrochemical Society. 2004, pp 354-360, issn 0161-6374, isbn 1-56677-406-3, 7 p.Conference Paper

Source-drain series resistance: The real limiter to MOSFET scalingTHOMPSON, Scott E.Proceedings - Electrochemical Society. 2004, pp 412-419, issn 0161-6374, isbn 1-56677-406-3, 8 p.Conference Paper